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Silicon Phototransistor
OP570 Series
OP570
Features:
?
SMD plastic package
OP573
?
?
?
?
High photo sensitivity
Fast response time
Choice of four lead configurations
IR transmissive plastic package
OP572
OP571
Description:
Each device in this series is an NPN silicon phototransistor mounted in an opaque plastic SMD package, with an
integral molded lens that enables a narrow acceptance angle and a higher collector current than devices without a
lense.
The OP570 series has four lead configurations and is compatible with most automated mounting equipment. The
OP570 series is mechanically and spectrally matched to the OP270 series infrared LEDs.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
? Non-contact position sensing
? Datum detection
? Machine automation
? Optical encoders
? IrDA
? Reflective and transmissive sensors
Part Number
OP570
OP571
OP572
OP573
Ordering Information
Viewing
Sensor
Angle
Phototransistor 25°
Lead
Length
Axial
Gull Wing
Yoke
Rev. Gull
OP570
OP571
OP571
OP572
1
OP573
Pin # Transistor
2
1
2
Collector
Emitter
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 02/07
Page 1 of 3
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相关代理商/技术参数
OP578/A,025 功能描述:MOSFET OP578/UNCASED/JAR//A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP579/A,025 功能描述:MOSFET OP579/UNCASED/JAR//A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP580 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP580 制造商:TT Electronics / OPTEK Technology 功能描述:Phototransistor
OP580/ABD,029 功能描述:MOSFET OP580/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP580DA 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP581/ABD,029 功能描述:MOSFET OP581/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
OP582/ABD,029 功能描述:MOSFET OP582/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube